Unoccupied electronic states of 2D Si on Ag- 3 -Si(111)

نویسندگان

چکیده

Optimizing substrate characterization to grow 2D Si layers on surfaces is a major issue toward the development of synthesis techniques promising silicene. We have used inverse photoemission spectroscopy (IPES) study electronic band structure an ordered layer the3×3-Ag/Si(111) surface (3-Ag). Exploiting large upwards bending the3-Ag substrate, we could investigate evolution unoccupied and interface states in most gap. In particular, thek∥-dispersion free-electron-likeS1surface state measured by IPES, reported for first time. Upon deposition ∼1 ML on3-Ag maintained at ∼200 °C, undergoes metal-insulator transition with complete disappearance theS1state. The latter replaced higher-lying stateU0with minimum 1.0 eV aboveEF. origin this new discussed terms various structures including

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ژورنال

عنوان ژورنال: Journal of Physics: Condensed Matter

سال: 2021

ISSN: ['0953-8984', '1361-648X']

DOI: https://doi.org/10.1088/1361-648x/abe794